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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1772
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The PA1772 is Dual P-Channel MOS Field Effect Transistor designed for power management applications of portable machines.
PACKAGE DRAWING (Unit : mm)
8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Dual chip type * Low on-state resistance RDS(on)1 = 20.0 m MAX. (VGS = -10 V, ID = -4 A) RDS(on)2 = 29.5 m MAX. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 34.0 m MAX. (VGS = -4.0 V, ID = -4 A) * Low Ciss: Ciss = 1500 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
PA1772G
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
-30 m20 m8 m32 2.0 1.7 150 -55 to + 150
V V A A W W C C
Gate Gate Protection Diode Body Diode
EQUIVALENT CIRCUIT (1/2 circuit)
Drain
Total Power Dissipation (2 unit) Total Power Dissipation (1 unit) Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty cycle 1% 2 2. TA = 25C, Mounted on ceramic substrate of 2000 mm x 2.2 mm
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device..
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G15830EJ1V0DS00 (1st edition) Date Published January 2003 NS CP(K) Printed in Japan
2001, 2003
PA1772
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage
Note Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -4 A VGS = -10 V, ID = -4 A VGS = -4.5 V, ID = -4 A VGS = -4.0 V, ID = -4 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -4 A VGS = -10 V RG = 10
MIN.
TYP.
MAX. -1 m10
UNIT
A A
V S
-1.0 6
-1.7 12 17.4 23.5 25.8 1500 550 240 13 11 120 70
-2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
20.0 29.5 34.0
m m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = -24 V VGS = -10 V ID = -8 A IF = 8 A, VGS = 0 V IF = 8 A, VGS = 0 V di/dt = 100 A/s
34 5 9 0.84 50 37 1.2
V ns nC
Note Pulsed: PW 350 s, Duty cycle 2%
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL VGS PG. RG
Wave Form
D.U.T. VGS(-)
0 10% VGS 90%
IG = -2 mA 50
RL VDD
VDD
PG.
90%
VDS(-)
90% 10% 10%
VGS(-) 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15830EJ1V0DS
PA1772
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.8
PT - Total Power Dissipation - W
100
2.4 2 unit 2 1.6 1 unit 1.2 0.8 0.4 0
Mounted on ceramic 2 substrate of 2000 mm x 2.2 mm
80
60
40
20
0 0 25 50 75 100 125 150 175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
- 1 00 ID(pulse)
PW = 1 0 0 s
ID - Drain Current - A
- 10
ID(D C )
1 ms R D S (o n ) L im ite d ( VGS = 10 V) P o w e r D is s ip a tio n L im ite d 10 ms 100 ms DC
-1
- 0 .1
T A = 2 5 C M o u n te d o n c e ra m ic s u b s tra te o f 2 2 0 0 0 m m x 2 .2 m m
- 0 .0 1 - 0 .0 1
- 0 .1
-1
- 10
- 1 00
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 73.5C/W 100
10
1 Mounted on ceramic substrate of 2 2000 mm x 2.2 mm Single pulse 1unit, TA = 25C
1m 10 m 100 m 1 10 100 1000
0.1
0.01 100
PW - Pulse Width - s
Data Sheet G15830EJ1V0DS
3
PA1772
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
- 50 Pulsed
FORWARD TRANSFER CHARACTERISTICS
- 100
ID - Drain Current - A
ID - Drain Current - A
- 40 VGS = -10 V - 30 -4.0 V - 20 -4.5 V
VDS = -10 V Pulsed
- 10 TA = 150C 75C 25C -25C
-1
- 10
- 0.1
0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 1.2 - 1.4
- 0.01 0 -1 -2 -3 -4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
-3
100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VDS = -10 V Pulsed T A = -25C 25C 75C 150C
VGS(off) - Gate Cut-off Voltage - V
- 2.5 -2 - 1.5 -1 - 0.5 0 -50 0 50
VDS = -10 V ID = -1 mA
10
1
100
150
0.1 - 0.01
- 0.1
-1
- 10
- 100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
40 Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
80 ID = -4 A Pulsed 60
30
VGS = -4.0 V -4.5 V -10 V
20
40
10
20
0 - 0.1
0 0 -5 - 10 - 15 - 20
-1
- 10
- 100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G15830EJ1V0DS
PA1772
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
50 ID = -4 A Pulsed 40 VGS = -4.0 V -4.5 V 20 -10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
V GS = 0 V f = 1 MHz
1000
C iss
30
C os s 100 C rss
10
0 -50 0 50 100 150
10 - 0.1
-1
- 10
- 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 30 - 15
VDS - Drain to Source Voltage - V
100
td(off) tf td(on)
- 20
VDD = 24 V 15 V 6V
VGS - 10
10
tr
- 10
-5
VDS 1 - 0.1 0 -1 - 10 - 100 0 10 20 30 40 50 0
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 1000 VGS = 0 V Pulsed 10
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
di/dt = 100 A/s VGS = 0 V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
1
10
0.1
0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet G15830EJ1V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = -15 V VGS = -10 V R G = 10
ID = - 8 A
PA1772
* The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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